Transistors GaN/GaAs

Sumitomo Electric located in Japan is the leading manufacturer of composite semiconductors (GaAs, GaN, InP), which are widely used in semiconductor lasers, LEDs and mobile telecommunications devices.

Low noise HEMTs

• GaAs HEMTs Small Signals

• Small Signal GaAs FETs Power GaN
• • High Power GaN Internally Paired HEMT
• • GaN HEMT for Base Station (F Series)
• • GaN HEMT for Base Station (C Series)
• • GaN HEMT for Radar
• • GaN HEMT Vane Amplifiers for Radar
• • General Purpose GaN HEMT Power GaAs

• • MMIC for C to Ka band power amplifiers (in box)
• • MMIC for C to V band power amplifiers (chip)
• • MMIC for low noise Ku to V band amplifiers
• • Ku band to V multiplier MMICs
• • MMIC Ku-band to Ka converters
• • MMICs for electronic bands
• • High power GaAs internally paired FETs
• • High power GaAs FETs
• • GaAs FETs (chip)

ASB Inc, as a World Class Product Company Korean government certified, has been designing and manufacturing RF amplifier MMICs and modules with more than 20-year experience for use in wireless and cabled communication systems.

ASB presents its new range of GaAs transistors.

AHL5216T8	19.8 dB Gain at 1500 MHz	20.5 dBm P1dB at 1500 MHz	36 dBm Output IP3 at 1500 MHz	0.31 dB NF at 1500MHz
AHL5218T8	19.4 dB Gain at 2000 MHz	20.5 dBm P1dB at 2000 MHz	36 dBm Output IP3 at 2000 MHz	0.37 dB NF at 2000MHz
AHL5220T8	18.4 dB Gain at 2500 MHz	19.0 dBm P1dB at 2500 MHz	36 dBm Output IP3 at 2500 MHz	0.42 dB NF at 2500MHz
AHL5318T8	18.1 dB Gain at 3500 MHz	18.0 dBm P1dB at 3500 MHz	34 dBm Output IP3 at 3500 MHz	0.59 dB NF at 3500MHz
AHB3612S6	- 14.8 dB Gain at 2000 MHz	25.0 dBm OIP3 at 2000 MHz	12.5 dBm P1dB at 2000 MHz	Gain flatness = 4.2 dB at 950 - 6500 MHz

Contact us

01 34 94 20 40 - sales@tech-inter.eu