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Planar Tunnel Diode Detector

DT Series • 100 MHz to 26.5 GHz 

No Polarization Extremely low video output resistance (typ. 125 ohms) 

Extremely fast impulse response (typ. 5 ns rise time) 

High reliability hermetically sealed modules 

Excellent frequency response 

Excellent dynamic range and output sensitivity voltage charged 

Maximum input power: + 17dBm 

Operating temperature range: -55 ° C to + 90 ° C 

Storage temperature range: -65 ° C to + 125 ° C 

Specification @ + 25 ° C and -20 dBm of power connectorized and drop-in


Shottky Zero Polarity Diode Detector

EZM & EZR Series • 10 MHz to 26.5 GHz

No polarization EZM Series 

Extremely flat frequency response 

EZR series 

High voltage output sensitivity 

Flat frequency response 

Maximum input power: 100mW CW 

Operating temperature range: 0 ° C to + 90 ° C 

Temperature range of storage: -65 ° C to + 125 ° C 

Specification @ + 25 ° C and -20 dBm input power 

Connected and drop-in


Polarized Shottky Diode Detector

ESS Series • 100 MHz to 26.5 GHz

High dynamic range @ 100 µA 

Typical bias Flat response and high sensitivity 

Ultra wide band and ultra fast 

Low video output resistance (350 ohms typically) 

High reliability hermetically sealed modules 

Maximum input power: +23 dBm 

Temperature of operating: 0 ° C to + 50 ° C 

Storage temperature range: -65 ° C to + 125 ° C 

Specification @ + 25 ° C and -20 dBm 

Input power

Connectorized and drop-in

Threshold detectorTh series • 100 MHz to 20 GHz

Module High reliability hermetically sealed 10 dB dynamic range: -20 dBm to -10 dBm (see note 2) 

Propagation delay: 10 nsec typical TTL logic output 

Minimum pulse width: 50 nsec typical 

Temperature stability: 1.0 dB, 3 dB above the threshold Internal or external voltage threshold adjustment 

Continuous current (no load): ± 5 VDC @ 100mA max 

Maximum input power: +20 dBm 

Operating temperature range: -55 ° C to + 90 ° C 

Temperature range from storage: -65 ° C to + 125 ° C 

Specification @ + 25 ° C 

Connectorized and drop-in

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